C/C-SiC梯度基复合材料氧化行为研究  

OXIDATION BEHAVIOR OF C/C-SiC GRADIENT MATRIX COMPOSITES

作　　者：邓景屹[1] 刘文川[1] 杜海峰[1] 成会明[1] 李依依 

机构地区：[1]中国科学院金属研究所

出　　处：《硅酸盐学报》1999年第3期357-361,共5页Journal of The Chinese Ceramic Society

基　　金：国家863计划新材料领域资助

摘　　要：研究比较了Ｃ／Ｃ－ＳｉＣ梯度基复合材料和Ｃ／Ｃ复合材料的氧化行为．实验结果表明：ＳｉＣ通过占据表面活性点提高了共沉积基体的氧化起始温度；由于减少了碳与氧的接触面积，阻挡氧化凹坑的扩展，降低了材料的氧化质量损失速率．The oxidation behavior of C/C and C/C-SiC gradient matrix composites were compared. The research results show that oxidation threshold of C-SiC co_deposited matrix increases through surface active sites occupied by SiC particles. Because of existence of SiC in carbon matrix, contact area between C and O2 decreases and oxidized pits are prevented from growing, resulting in decrease of oxidation mass loss. The micro_oxidation process was observed by SEM.

关 键 词：碳 复合材料 氧化 碳化硅 非金属 

分 类 号：TB332.03[一般工业技术—材料科学与工程]