多结化合物电池用p型Ge抛光片清洗技术研究  

Research on Cleaning Technique of p Type Ge Polishing Wafers for Compound Cell

作　　者：刘春香[1] 杨洪星[1] 赵权[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2010年第8期764-767,共4页Semiconductor Technology

基　　金：国家"863"计划引导项目(2002AA001013)

摘　　要：对多结化合物太阳电池用的p型Ge抛光片的清洗技术做了研究。Ge抛光片的清洗可以采用酸性清洗液和碱性清洗液相结合的方式。酸性清洗液的主要作用是去除晶片表面的有机物;碱性清洗液的主要作用是去除晶片表面的颗粒。清洗液的温度和组分影响着抛光片的清洗效果。通过实验结果确定了p型Ge抛光片的清洗方案,采用这一清洗方案清洗的Ge抛光片,表面质量可以达到"开盒即用"的水平。运用晶片清洗机理分析了各种清洗液的功能和作用。Cleaning technique of p-type Ge polishing wafers for compound cell was investigated.The method of cleaning for Ge polishing wafers combines acid rinsing and alkaline cleaning solution.The functions of acid cleaning solution and alkaline cleaning solution are to wipe organic matter and particles off the wafer surface.The cleaning effect of rinsing solution wafer was influenced by temperature and solution component.By some experiments,the cleaning method of p-type Ge polishing wafers was found.Using this method,the quality of the wafer surface is excellent,wafer can be used directly.The functions and roles of some cleaning solutions were analyzed by wafer cleaning mechanism.

关 键 词：p型锗抛光片 清洗技术 太阳电池 清洗液 晶片 

分 类 号：TN305.2[电子电信—物理电子学]