GaAs大功率器件内匹配技术研究  

Study on the Internally Matched Technique of High Power GaAs FETs

作　　者：邱旭[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2010年第8期780-783,共4页Semiconductor Technology

摘　　要：介绍了GaAs大功率器件内匹配技术的基本原理,包括匹配电路原理、内匹配元件的参数计算方法等。以C波段40 W大功率器件为例讲述了内匹配技术在GaAs功率器件设计中的应用。通过大信号建模获得大栅宽器件模型,通过ADS软件进行内匹配电路参数的优化计算。通过电路制作及调试,实现了大功率器件的性能。经测试,当器件Vds=9 V时,在5.2~5.8 GHz频段内,输出功率Po≥40 W,功率增益Gp≥9 dB。测量值和设计值基本吻合。The basic principle of internally matched technology of a high power GaAs FETs is described,including the principle of matched circuit,the parameter calculate method of internally matched elements,etc.With the example of C-band 40 W power device,the application of internally matched technology for GaAs power device design is introduced.By building large-signal model,a wide-gatewidth device model was got.The internal matched circuit parameters were optimized and calculated using ADS software.After manufacturing and debugging,the characteristics of power device were achieved.Testing results show that the device yields more than 46 dBm（40 W）output power and over 9 dB power gain,across the band of 5.2～5.8 GHz with Vds=9 V.The measured data of the power device are closed to the calculated data.

关 键 词：内匹配技术 大功率 砷化镓场效应晶体管 大信号模型 

分 类 号：TN386.3[电子电信—物理电子学]