SiC MESFET反向截止漏电流的研究  

Study on Off-Set Shreshold Leakage Current of SiC MESFET

作　　者：崔现锋[1] 潘宏菽[1] 

机构地区：[1]河北半导体研究所,石家庄050051

出　　处：《半导体技术》2010年第8期784-786,共3页Semiconductor Technology

摘　　要：给出了一种减小SiC MESFET栅漏反向截止漏电流的工艺方法,通过采用LPCVD淀积厚SiO2和高温氧化工艺,使器件的性能得到一定的提升。从实验数据看出,器件在S波段工作时,器件的反向截止漏电流大幅度下降,且分散性得到改善,其功率附加效率和功率增益也分别提高了10%和1.5 dB。该方法充分发挥了SiC材料能形成自身氧化层的优势,结合Si工艺的特点,减小了氧化层的缺陷,并在一定程度上减小了器件的寄生电容。A new technique for reducing the gate-drain leakage of SiC MESFET is introduced.Device performance was improved by using deposit thick SiO2 and high-temperature oxidation.The analysis of testing data shows when device working in S band,the off-set leakage current is heavily decreased,the dispersedness is improved and the power gain efficiency and the power gain is increased 10% and 1.5 dB respectively.For SiC material can form self-oxide,and combine the advantage of SiC process,this technique decrease the oxide defect amount,and decrease the parasitic capacitance.

关 键 词：反向截止漏电流 碳化硅金属外延半导体场效应晶体管 氧化 低压化学气相淀积 

分 类 号：TN386.3[电子电信—物理电子学]