一种多输出的快速高电源抑制比带隙基准  

High-Speed,High-PSRR Bandgap Reference with Multi-Output

作　　者：肖剑[1] 任国栋[2] 

机构地区：[1]长安大学道路交通检测与装备工程技术研究中心,西安710064 [2]兰州理工大学理学院,兰州730050

出　　处：《半导体技术》2010年第8期816-818,共3页Semiconductor Technology

基　　金：中央高校基本科研业务费专项资金(CHD2009JC110);长安大学基础研究支持计划专项基金;西安市科技计划项目(CXY1012)

摘　　要：设计并实现了一种简单的、多输出的带隙基准电路,利用pnp型双极型晶体管作为射极跟随器驱动带隙基准,工作电流由与绝对温度成正比的电流源提供,并且设计了启动电路。基于CSMC 0.5μm工艺对电路进行了优化,仿真表明在全温度范围内基准电压变化2.72 mV,低频电源抑制比高于-100 dB,输出建立时间10μs;对降压型DC-DC电源芯片的直流和交流测试表明,基准工作稳定可靠。A simple bandgap reference with multi-output was designed which used a pnp transistor as an emitter follower to drive the reference.A current source was used to provide the bias current that was proportional to the absolute temperature,and a start-up circuit was designed.After optimized with CSMC 0.5 μm process,the variation of reference voltage is 2.72 mV from-40 ℃ to 120 ℃,the low-frequency power supply rejection ratio is large than-100 dB,the setup time is about 10 μs.The DC and AC measured results in a buck DC-DC regulator chip shows that the reference circuit is stable and safe.

关 键 词：带隙基准 多输出 建立时间 电源抑制比 

分 类 号：TN492[电子电信—微电子学与固体电子学]