硅颗粒氧化对Si_P/Al复合材料溶解现象的影响  

Effects of Oxidation of Si Particles on Dissolution Behavior of Si_P/Al Composite

作　　者：谭雯[1] 于家康[1] 薛晨[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《热加工工艺》2010年第14期72-74,79,共4页Hot Working Technology

摘　　要：采用气压浸渗法制备了SiP/Al复合材料,研究了Si颗粒氧化及其在铝合金液中的溶解,测定了复合材料在25～200℃的热膨胀系数。结果表明,调整氧化温度和保温时间可改变Si颗粒氧化程度;SiO2氧化层能有效减少Si颗粒的溶解,提高Al/Si界面的结合强度,并降低热膨胀系数值;Si颗粒在1150℃保温2 h后,溶解现象基本消失。SiP /Al composite was fabricated by gas pressure infiltration.The oxidation and solution of Si particles in aluminum alloy as well as CTE at 25～200 ℃ were investigated.The results show that,the degree of oxidation of Si particles can be changed with adjusting oxidation temperature and holding time.SiO2 oxide layer can reduce the dissolution of Si particles to enhance Al / Si interface bonding strength and lower the thermal expansion coefficient.After treated at 1150 ℃ for 2 h,the dissolution phenomenon of Si particles disappears.

关 键 词：复合材料 气压浸渗 氧化 扩散 电子封装 

分 类 号：TB333[一般工业技术—材料科学与工程]