进电材料及压力对半导体放电加工接触电阻的影响  

Effect of Contact Materials and Pressure on Contact Resistance in Discharge Machining of Semiconductors

作　　者：胡燕伟[1] 刘志东[1] 邱明波[1] 汪炜[1] 田宗军[1] 毕勇[1] 黄因慧[1] 

机构地区：[1]南京航空航天大学机电工程学院,南京210016

出　　处：《机械科学与技术》2010年第8期1089-1093,1096,共6页Mechanical Science and Technology for Aerospace Engineering

基　　金：江苏省高技术研究计划项目(BG2007004)资助

摘　　要：为了减小半导体放电加工中的接触电阻,首先采用具有不同功函数的材料对P型硅进电,进行伏安特性测试,得出当进电材料的功函数与半导体材料功函数相近时接触电阻比较小;其次对在不同接触压力下的P型硅进行了伏安特性测试,结论表明压力越大进电材料与半导体之间的平均间隙越小进而接触电阻越小;再次利用电火花线切割(WEDM)对P型硅加工对上述结论进行了实验验证。最后提出了两项有利于减小半导体接触电阻的工艺措施,以便更好地指导半导体材料的放电加工。In order to reduce the contact resistance in discharge machining of semiconductors,we first carry out the voltage-current characteristic tests when materials with the different work functions are used to transmit electricity to the P silicon. Results indicate that the contact resistance is quite small when the work functions of semiconductor and contact materials is close. Then,we carry out the voltage-current characteristic tests for different contact pressures between P-type silicon and contact materials. Results indicate that the bigger the pressure between the contact materials and the semiconductor,the smaller the average gap; thus the contact resistance is smaller. Processing the P-type silicon by wire electrical discharge machining（ WEDM） verified the above two conclusions. Finally,two technological parameters are proposed to reduce the contact resistance between the semiconductor and the contact material,which is very useful for discharge machining of semiconductors.

关 键 词：放电加工 半导体 接触电阻 进电材料 接触压力 

分 类 号：TG661[金属学及工艺—金属切削加工及机床] O471.5[理学—半导体物理]