脉冲激光沉积法制备Zn0薄膜中衬底温度对Zn0薄膜结构的影响  

Effect of the Substrate Temperature in the Preparation of Zn0 thin Film by the Pulse Laser Deposition

作　　者：刘涛[1] 

机构地区：[1]商洛学院物理系,陕西商洛726000

出　　处：《榆林学院学报》2010年第4期30-32,共3页Journal of Yulin University

摘　　要：采用溶胶——凝胶法制备高纯的靶材,利用PLD法生长薄膜,成功地在Si衬底上生长了高质量的ZnO薄膜,系统的研究了衬底温度对薄膜生长的影响。采用XRD对薄膜结构进行分析。XRD测试表明,大部分薄膜都具有高度的C轴择优生长取向性,只有衬底温度过高薄膜结构才发生改变。The paper studies the preparation of high-purity target materials by sol-gel process,using the method of PLD,the high quality ZnO films was generated on the Si substrate successfully.Effect of the substrate temperature in the preparation of Zn0 thin film was researched.The results of XRD measurement shows that most of the film is highly preferred growth in orientation of C axis,the structure of films change only when the substrate temperature is high.

关 键 词：溶胶——凝胶 脉冲激光沉积(PLD) ZNO薄膜 X射线衍射(XRD) 

分 类 号：TN304[电子电信—物理电子学]