ZnO／SnS复合薄膜的制备及其光伏性能  

Fabrication and Photovoltaic Properties of ZnO/SnS Coextruded Films

作　　者：伍丽[1] 史伟民[1] 张兆春[1] 秦娟[1] 王林军[1] 魏光普[1] 夏义本[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《上海大学学报（自然科学版）》2010年第4期436-440,共5页Journal of Shanghai University:Natural Science Edition

摘　　要：利用n型氧化锌和p型硫化亚锡制备ITO/ZnO/SnS/Al结构的pn结太阳能电池.首先采用射频磁控溅射法在ITO衬底上制备ZnO薄膜,再用真空蒸发镀膜法沉积SnS薄膜以形成异质结,并利用X射线衍射(X-raydiffraction,XRD)光谱、透射光谱和I-V曲线来表征薄膜和器件的性能.讨论在不同溅射功率和工作气压下制备的ZnO薄膜对光吸收情况和所形成异质结器件的影响,测量不同沉积时间制备的ZnO薄膜相应的器件的开路电压、短路电流密度和填充因子.结果表明,当工作气压和溅射功率分别为0.2 Pa和150 W,沉积时间为40 min时得到的ZnO薄膜能获得较好的异质结且器件的性能达到最优化.该最优器件的短路电流密度JSC为1.38 mA.cm-2,开路电压V为0.42 V,填充因子F为0.40.The n type ZnO and p type SnS were used to prepare solar cells with the structure of ITO/ZnO/ SnS/Al. The n-ZnO thin films were first obtained on the ITO suhstrate by using RF magnetron sputtering with different working pressures and sputtering powers. The p-SnS thin films were then deposited on the n- ZnO layers by vacuum evaporation. Qualities of ZnO thin films were analyzed with an ultraviolet visible spectrophotometer （UI/VIS） and the properties of heterojunctions were measured with X-ray diffraction （XRD）. The photoelectric properties of SnS/ZnO heterojunetion solar cells were characterized with I-V curves. As a result, a better solar cell was prepared with the fabrication of n-ZnO under 0.2 Pa working pressure, 150 W sputtering power and 40 min depositing time. The cell parameters are ： Jsc = 1.38 mA ·cm^ -2 VOC =0.42 V, FF =0.40.

关 键 词：太阳能电池 SNS ZNO 真空蒸发 磁控溅射 

分 类 号：TK514[动力工程及工程热物理—热能工程]