钽掺杂对氧化锌透明导电薄膜结构和电学特性的影响  

Effect of tantalum-doping on microstructure and electrical Properties of ZnO transparent conducting film

作　　者：陈进军[1] 曹铃[2] 宋学萍[2,3] 孙兆奇[2,3] 

机构地区：[1]贵州大学电气工程学院,贵州贵阳550003 [2]安徽大学物理与材料科学学院,安徽合肥230039 [3]安徽大学光电信息获取与控制教育部重点实验室,安徽合肥230039

出　　处：《安徽大学学报（自然科学版）》2010年第4期59-63,共5页Journal of Anhui University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(5087200150642038);教育部博士点专项基金资助项目(20060357003);安徽省人才专项基金资助项目(2004Z029);贵州省科学技术基金项目资助项目([2009]2117)

摘　　要：采用射频磁控溅射法在玻璃衬底上室温沉积不同钽掺杂浓度的氧化锌透明导电薄膜.并对其结构和电学特性进行分析.对衍射峰的分析说明Ta元素以替位Zn元素的形式溶入ZnO晶格中形成了固溶体.当钽掺杂比例从0 wt%增加到10 wt%,晶格常数从0.5242 nm增加到0.5314 nm,表明薄膜中存在平行于c轴方向的张应力.薄膜沿c轴的晶粒尺寸在9.4-13.5 nm之间.薄膜的电阻随着掺杂比例增加首先显著下降,当掺杂比例为5 wt%时,薄膜最小电阻率为7.81×10^-2Ω.cm,进一步增加掺杂比例到10 wt%,电阻率增大为1.25×10^-1Ω.cm.Tantalum-doped zinc oxides transparent conducting films with different Ta fraction were prepared by RF magnetron sputtering on glass substrates at room temperature,and their microstructure as well as electrical properties were characterized and analyzed.X-ray diffraction analysed suggested that Ta had been incorporated into ZnO lattice and substituted Zn in the hexagonal lattice.With the increase of the Ta2O5 content from 0 to 10 wt%,the lattice constants of ZnO increased from 0.524 2 to 0.531 4 nm and the crystallite size was in the range of 9.4 to 13.5 nm.The resistivity remarkably decreased with increasing Ta2O5 content firstly,and the lowest resistivity with the Ta2O5 content of 5 wt% was 7.81×10-2 Ω·cm.As the Ta2O5 content increased further to 10 wt%,the resistivity increased to 1.25×10-1 Ω·cm.

关 键 词：Ta-ZnO薄膜 射频磁控溅射 微结构 电阻率 

分 类 号：O484.1[理学—固体物理]