A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers  

作　　者：Vahid BahramiYekta Hassan Kaatuzian 

机构地区：[1]Photonics Research Laboratory(P.R.L),Department of Electrical Engineering,Amirkabir University of Technology

出　　处：《Communications in Theoretical Physics》2010年第9期529-535,共7页理论物理通讯（英文版）

摘　　要：In this study we investigate strain effect in barriers of 1.3 μm AlCalnAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Harniltonian equations have been solved to obtain quantum states and envelope wave functions in the structure. In the case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive strain in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 ℃. 20% improvement in mode gain-current density characteristic is also obtained in 85 ℃.

关 键 词：multiple quantum well laser semiconductor laser strain in barrier UNCOOLED 

分 类 号：O471.1[理学—半导体物理]