Phonon-induced magnetoresistance oscillations in a high-mobility quantum well  

作　　者：周其盛 曹俊诚 齐鸣 雷啸霖 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]Department of Physics,Shanghai Jiao Tong University

出　　处：《Journal of Semiconductors》2010年第9期1-4,共4页半导体学报（英文版）

基　　金：supported by the National Basic Research Program of China(No.2007CB310402);the National Natural Science Foundation of China(No.60721004);the Major Projects(Nos.KGCX1-YW-24,KGCX2-YW-231);the Hundred Scholar Plan of the Chinese Academy of Sciences

摘　　要：We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes,using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τ;is attributed to the enhancement of electron-phonon scattering with rising temperature.The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature,is produced,in agreement with recent experimental findings.We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes,using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τ_s is attributed to the enhancement of electron-phonon scattering with rising temperature.The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature,is produced,in agreement with recent experimental findings.

关 键 词：two-dimensional electron gas phonon-induced magnetoresistance oscillations linear mobility optimal temperature 

分 类 号：O471.1[理学—半导体物理]