质子辐照CCD诱发暗信号增大  

Proton irradiation induced dark signals in CCDs

作　　者：王祖军[1,2] 刘以农[1] 陈伟[2] 唐本奇[2] 肖志刚[2] 刘敏波[2] 黄绍艳[2] 张勇[2] 

机构地区：[1]清华大学工程物理系,粒子技术与辐射成像教育部重点实验室,北京100084 [2]西北核技术研究所,琶安710024

出　　处：《清华大学学报（自然科学版）》2010年第9期1484-1488,共5页Journal of Tsinghua University(Science and Technology)

摘　　要：质子辐照诱发电荷耦合器件(CCD)中的暗信号。建立了质子辐照电离损伤的辐射效应模型,通过应用半导体器件仿真软件MEDICI进行数值模拟计算,得出了质子辐照电离损伤诱发CCD表面暗信号随辐照注量增大的变化规律;建立了质子辐照位移损伤的辐射效应模型,数值模拟计算了质子辐照位移损伤诱发体缺陷导致CCD体暗信号增大的变化规律。综合比较了质子辐照损伤诱发增大的CCD表面暗信号、体暗信号和总的暗信号随质子辐照注量的变化规律。数值模拟计算结果与国外相关实验得出的规律相吻合。Proton irradiation can induce dark signals in CCDs（charge coupled device）.Simulations of the ionization and displacement damage were developed to study the effect of proton irradiation.The semiconductor device simulation software MEDICI was used to simulate both the surface dark electrons induced by the proton ionization and the bulk dark electrons induced by the proton displacement.The predicted effects of the surface dark electrons,bulk dark electrons,and total dark electrons,which varies with the proton fluence,compare well with the experimental data in the literature.

关 键 词：电荷耦合器件(CCD) 质子 暗信号 电离损伤 位移损伤 数值模拟 

分 类 号：TN386.5[电子电信—物理电子学]