双抛量子阱中类氢杂质的结合能  

Binding Energy of a Hydrogenic Impurity in Double Parabolic Quantum Wells

作　　者：郝剑红[1,2] 闫发旺[1,2] 李有成 

机构地区：[1]石家庄师范专科学校物理系 [2]河北师范大学物理系

出　　处：《河北师范大学学报（自然科学版）》1999年第2期209-214,共6页Journal of Hebei Normal University：Natural Science

摘　　要：以ＧａＡｓ／Ｇａ１－ｘＡｌｘＡｓ为例，在有效质量的近似下，讨论了双抛量子阱中类氢杂质的结合能．结果表明：（１）双方量子阱中类氢杂质的结合能是双抛阱中杂质结合能的１．３倍；（２）无论杂质在阱中还是垒中，不仅垒宽和阱宽影响其结合能。Considering the effective mass appoximation and taking the GaAs/Ga 1 x Al x As for example,we investigate the binding energy of a hydrogenic impurity in the double parabolic quantum well(DPQW).The results show that: (1)The binding energy of a hydrogenic impurity in the double square quantum well (DSQW) is about 1.3 times larger than in DPQW;(2)No matter where the shallow donor is, the barrier thickness( L b),the well width ( L W) and the donor composition( x )all affect the binding energy( E b)greatly.

关 键 词：类氢杂质 结合能 量子阱 双抛量子阱 半导体 

分 类 号：O471.1[理学—半导体物理]