多晶硅中硼含量的密闭消解-ICP-AES法测定  

Determination of Boron in Polycrystalline Silicon by Closed Vessel Heating Digestion Coupled with Inductively Coupled Plasma Atomic Emission Spectrometry

作　　者：田俊[1] 陈红雨[1] 李核[1] 

机构地区：[1]华南师范大学化学与环境学院,广东广州510006

出　　处：《分析测试学报》2010年第9期962-965,共4页Journal of Instrumental Analysis

基　　金：国家重点基础研究发展计划资助项目(2009CB226109)

摘　　要：采用恒压密闭消解的方法分解多晶硅样品,电感耦合等离子体原子发射光谱测定多晶硅样品中的硼含量。探讨了酸及络合剂的类型与用量对硼含量测定的影响,优化后的实验条件为：消解体系为2 mL HF＋2 mL H2O＋0.6 mL HNO3,络合剂为0.30 mL甘露醇溶液（2.5 g/L）,稀释剂为0.3 mol/L的硝酸。在最佳实验条件下,硼元素的回收率为91%~95%,相对标准偏差均小于5.0%。In this paper,a closed vessel heating digestion method was used to dissolve polycrystalline silicon and an inductively coupled plasma atomic emission spectrometry（ICP-AES） was used to determine the content of boron in polycrystalline silicon.The type and amount of acid and chelating agents were investigated and optimized.The optimum experimental conditions were as follows：2 mL HF＋2 mL H2O＋0.6 mL HNO3 as digestion reagents,0.30 mL mannitol solution（2.5 g/L） as complexing agent and 0.3 mol/L nitric acid as thinner.Under the optimized conditions,the recoveries of boron were in the range of 91%-95% and the relative standard deviations were less than 5.0%.

关 键 词：电感耦合等离子体原子发射光谱(ICP-AES) 多晶硅 硼 甘露醇 

分 类 号：O562.3[理学—原子与分子物理] O613.81[理学—物理]