InP基RTD特性的数值模拟研究  

Numerical Simulation on Characteristics of InP-base Resonant Tunneling Diode

作　　者：王伟[1,2] 孙浩[3] 孙晓玮[1] 徐安怀[3] 齐鸣[3] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国科学院研究生院,北京100039 [3]信息功能材料国家重点实验室,上海200050

出　　处：《固体电子学研究与进展》2010年第3期317-322,332,共7页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60676062)

摘　　要：采用基于非平衡格林函数法(Non-equilibrium Green’s function,NEGF)量子输运模拟器WinGreen对InP基共振隧穿二极管(RTD)的输运特性进行了计算模拟,分析了Ga0.47In0.53As/AlAs以及富In组份势阱双势垒结构几何参数、散射参数、发射区和集电区掺杂浓度以及隔离层厚度对InP基RTD器件I-V特性的影响。模拟结果表明,采用富In组份的势阱有利于降低峰值电压,提高发射区掺杂浓度有利于增大峰值电流密度,而散射则会导致谷值电流增大,影响其负阻特性。The numerical simulation is carried out to investigate the transport characteristics of the InP-base resonant tunneling diode （RTD）. The non-equilibrium Green＇ s function （NEGF） based on quantum transport simulator WinGreen is used. The effects of geometric parameter of Ga0.47In0.53As/AlAs and In-rich quantum well double barrier structures, scattering parameter, doping level in emitter and collector, spacer width on I-V characteristics of the RTD are analyzed and discussed. The results show that using In-rich quantum well structure and raising doping level in emitter are propitious to lower peak voltage and improve peak current density respectively, while scattering can affect the negative resistance characteristics by increasing valley current.

关 键 词：磷化铟基共振隧穿二极管 电流-电压特性 非平衡格林函数法 散射 

分 类 号：TN313[电子电信—物理电子学]