双量子环的隧穿电导和隧穿磁电阻  

Tunneling Conductance and Tunneling Magnetoresistance in Quantum Double Ring

作　　者：杜坚[1] 王素新[1] 

机构地区：[1]河北民族师范学院物理系,河北承德067000

出　　处：《固体电子学研究与进展》2010年第3期346-349,共4页Research & Progress of SSE

基　　金：河北省教育厅自然科学研究指导项目(Z2008103)

摘　　要：研究了双量子环的隧穿电导和隧穿磁电阻,研究结果表明:隧穿电导和隧穿磁电阻都随半导体环增大做周期性等幅振荡。δ势垒、Rashba自旋轨道耦合、AB磁通对隧穿电导或隧穿磁电阻的影响各不相同。隧穿磁电阻随AB磁通增强发生周期性等幅振荡,并随φ0角的减小而增大。两电极磁矩方向反平行时,隧穿磁电阻恒为零。The tunneling conductance and the tunneling magnetoresistance in the double quantum ring are studied in this paper. The results indicate that the tunneling conductance and the tunneling magnetoresistance show behavior of periodic iso-amplilude oscillation with the size of the semiconductor ring increasing. The δ barrier, Rashba spin-orbit interaction as well as AB flux all have different effects on tunneling conductance or tunneling magnetoresistance. The tun- neling magnetoresistance makes periodic iso-amplitude oscillation with the intension of AB flux enhancing. Furthermore it will increase with the angle φ0 decreasing. But when the direction of the magnetic moment in the two electrodes is antiparalle,the tunneling magnetoresistancet identically equals zero.

关 键 词：量子环 隧穿电导 隧穿磁电阻 RASHBA自旋轨道耦合 AB磁通 

分 类 号：O471.1[理学—半导体物理]