LDMOSFET电热耦合解析模型  

Analytical Electro-thermal Model for RF-LDMOSFET

作　　者：孙晓红[1,5] 戴文华 严唯敏[3] 陈强 高怀[1,5] 

机构地区：[1]东南大学国家ASIC系统工程中心,南京210096 [2]Infineon Technologies North America Corp,Morgan Hill,CA 95037,United States [3]苏州大学应用技术学院机电工程系,江苏苏州215325 [4]Department of Electronic System,the Royal Institute of Technology-KTH,Stockholm 16440,Sweden [5]苏州工业园区教育投资发展有限公司&苏州英诺迅科技有限公司射频功率器件及电路技术中心,江苏苏州215123

出　　处：《固体电子学研究与进展》2010年第3期370-376,424,共8页Research & Progress of SSE

摘　　要：建立了包含电热耦合相互作用的大信号非线性射频LDMOSFET解析模型—Agereelectro-thermal transistor(AET)模型,包括:模型的拓扑图、等热和脉冲器件测试表征系统、模型参数的提取过程。在Agilent的电子设计工具软件ADS中植入和实现了该模型,并将其应用于实际射频功率放大器的设计,通过测量验证了该模型的正确。This paper presents the model development of Agere eletro-thermal transistor, an electro-thermal large signal nonlinear RF-LDMOSFET model used in radio frequency （RF） power amplifiers （PAs）. We first describe our model schematics, then the iso-thermal and pulsed device characterization systems used in the parametrization of the model are described. The extraet- ed model is implemented in Agilent＇s Advanced Design System （ADS） for the development of several PAs. Finally, the model accuracy is measured by comparing several experimental verifications of physical chips against those of EDA designs.

关 键 词：横向双扩散金属氧化物半导体晶体管 解析模型 晶体管模型 封装模型 热模型 

分 类 号：TN32[电子电信—物理电子学]