MgO/SrTiO_3(001)生长初期的各向异性晶格畸变  

Anisotropic Lattice Strain of MgO/SrTiO_3(001) Film in Initial Growth Stage

作　　者：魏贤华[1] 崔传伟[1] 张鹰[2] 朱俊[2] 

机构地区：[1]西南科技大学材料科学与工程学院,绵阳621010 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《真空科学与技术学报》2010年第5期484-487,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：通过原位的反射高能电子衍射,监测并测量了MgO/SrTiO3(001)岛状生长初期过程中的面内、面外晶格常数的演变。薄膜的面内晶格在一开始生长时就发生弛豫,且大多数应变在2 nm厚度左右被释放并几乎保持稳定,而面外的晶格应变弛豫一直持续进行。这种应变的各项异性被认为与薄膜的织构导致的应变能变化有关。The MgO film was deposited by laser molecular beam epitaxy on SrTiO3 （001） substrates and its growth was in-situ monitored with reflection high-energy electron diffraction. The out-of-plane and in-plane lattice constants in the island formation in its initial growth stage were evaluated. The in-plane lattice was found to relax immediately after the deposition started; and the majority of the in-plane strain was relieved at a film thickness of 2 nm. Beyond that thickness, the inplane lattice almost remained unchanged; and the relaxation of the out-of-plane lattice continued. The anisotropic strain may possibly be attributed to the changes in the strain energy induced bv the film texture.

关 键 词：反射高能电子衍射 晶格 各向异性 应变 织构 

分 类 号：O484[理学—固体物理]