GaN基半导体上BiFeO_3薄膜的生长与性能研究  

Growth and Characterization of BiFeO_3 on GaN-Based Semiconductor

作　　者：罗文博[1] 朱俊[1] 廖秀尉[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《真空科学与技术学报》2010年第5期488-491,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究发展计划"973"项目;国家自然科学基金项目(50772019)

摘　　要：采用脉冲激光沉积法在(0001)取向的GaN以及AlGaN/GaN调制掺杂结构上制备了(111)取向的BiFeO3(BFO)薄膜。首先在导电氧化物SrRuO3和TiO2缓冲层包覆的GaN上制备了BFO薄膜,分析了在GaN上生长的BFO薄膜的面外取向、外延关系、表面形貌以及电学性能等性质。然后,在AlGaN/GaN调制掺杂结构上采用TiO2缓冲层生长了BFO薄膜,并采用光刻工艺分别在AlGaN表面制备Ti/Al/Ti/Au欧姆电极和BFO表面制备Ni/Au肖特基电极以形成二极管结构。C-V测试表明,由于BFO铁电薄膜极化的作用,BFO/TiO2/AlGaN/GaN结构具有1 V左右的逆时针窗口。The（111） oriented BiFeO3 （BFO） films were grown by pulsed laser deposition on substrates of （0001）- GaN and the modulation doped A1GaN/GaN. The microstructures and ferroelectric property of the BFO were characterized with X-ray diffraction,piezo-response force microscopy and conventional probes. The impact of the TiO2 buffer layer, deposited on the modulation-doped AIGaN/GaN substrate, on growth of the BFO films was studied. A Ti/Al/Ti/Au Ohmic contact was fabricated on AlGaN surface and a Ni/Au Schottky contact was made on BFO surface by e-beam lithography, respectively. The capacity-voltage characteristics measured at a frequency of 1 MHz show that an anti-clockwise C- V window with a width of 1.0 V exists possibly because of the polarization of the BFO films.

关 键 词：BIFEO3 脉冲激光沉积 X射线衍射 压电力显微镜 

分 类 号：O484.1[理学—固体物理] O484.2[理学—物理]