碳热还原法合成SiC供电参数的研究  

POWER SUPPLYING PARAMETER IN SYNTHESIS OF SiC BY CARBOTHERMAL REDUCTION METHOD

作　　者：陈杰[1] 王晓刚[1] 

机构地区：[1]西安科技大学材料科学与工程学院,西安710054

出　　处：《硅酸盐学报》2010年第9期1792-1796,共5页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(50174046);陕西省教育厅专项(08JK347)资助项目

摘　　要：在碳热还原法合成SiC生产中,供电参数对SiC产品的产量、质量及能耗有重要影响。以SiC生产实测参数为基础,通过对SiC冶炼过程温度场的数值模拟,揭示了合成SiC的传热传质规律,建立了用数值模拟预测冶炼SiC供电参数的方法,准确预测了单热源炉合成SiC的供电时间为36h,表面负荷为11～13W/cm2,模拟结果得到了生产实践验证。The power supplying parameter has an important effect on the yield,quality and energy consumption in the synthesis of SiC by carbothermal reduction method.Based on the measurement parameter in SiC production and the temperature field numerical simulation of the smelting process,the heat and quality transferring law in the synthesis of SiC is established and the method of predicting power supplying parameters is proposed through the numerical simulation.The power supplying time and the superficial charge in the synthesis of SiC in a single-heat-source furnace are predicted as 36 h and 11-13 W/cm^2,respectively.The prediction result is verified by the practical data from the industry production.

关 键 词：碳化硅 碳热还原法 供电参数 数值模拟 温度场 

分 类 号：TQ021.3[化学工程]