0.35μm部分耗尽SOI NMOSFET的总剂量辐射效应与偏置状态的关系  

Bias Dependence of Total Dose Radiation Effect of 0.35 μm PD SOI NMOSFET

作　　者：唐威[1] 刘佑宝[1] 耿增建[1] 吴龙胜[1] 

机构地区：[1]西安微电子技术研究所,西安710054

出　　处：《核电子学与探测技术》2010年第8期1031-1036,共6页Nuclear Electronics & Detection Technology

摘　　要：研究了深亚微米部分耗尽型SOI NMOSFET的抗总剂量辐射特性,主要讨论不同偏置状态对器件抗总剂量辐射性能的影响及其原因。通过器件模拟发现,辐射过程中的不同偏置状态使器件的电场分布差异很大,而器件埋层中俘获空穴的分布与电场密切相关,进而对器件产生不同的影响。模拟结果表明,器件在关态偏置下,背沟道附近陷获电荷密度最高,引起的阈值电压负向漂移和泄漏电流最大,即该偏置状态为浮体器件抗总剂量辐射的最劣偏置状态。The total dose irradiation effects under different bias configurations for deep - submicron PD SOI devices are investigated, especially the performance influence due to radiation induced trapped charges. The simulation results show that distribution of the electrical field is strongly dependent on the bias configuration, and the generation of trapped charges is related to the electrical field. The variety of the electrical field distribution leads to the different trapped charge distribution, and thus corresponding impact degree of device performance. The OFF state of floating - body device is the worst - case bias condition due to the highest density of trapped charges and results in the largest leakage current and negative drift of threshold voltage.

关 键 词：SOI 抗总剂量辐射 部分耗尽 俘获电荷 背沟道反型 

分 类 号：TN386.1[电子电信—物理电子学]