压力下应变纤锌矿有限厚势垒异质结中杂质态的结合能  

Binding Energies of Impurity States in Strained Wurtzite Heterojunctions with Finite Potential Barriers under Pressure

作　　者：冯振宇[1] 班士良[1] 

机构地区：[1]内蒙古大学物理科学与技术学院

出　　处：《内蒙古大学学报（自然科学版）》2010年第5期509-516,共8页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(60966001);内蒙古自治区自然科学基金重点项目资助(20080404Zd02)

摘　　要：对应变AlxGa1-xN/GaN单异质结构,考虑理想界面异质结有限厚势垒,引入简化相干势近似计入三元混晶效应,利用变分法对流体静压力下体系中杂质态的结合能作了数值计算,并讨论了不同垒厚、杂质位置及组分对结合能的影响,且与无限厚势垒情形作了比较.结果表明:当垒厚、组分较小且沟道层中杂质位置靠近界面时,有限厚势垒杂质态的结合能明显大于无限厚势垒情形.A variational method is used to investigate the binding energy of impurity states in a strained AlxGa1-xN/GaN heterojunction with a finite thick potential barrier under hydrostatic pressure by adopting a simplified coherent potential approximation to take into account the effects of ternary mixed crystals. The influences of the barrier width, the impurity position and the Al component on the binding energy are discussed and compared with that of a heterojunction with an infinite thick barrier. The results indicate：the binding energy for a heterojunction with a finite thick barrier is obviously greater than that with an infinite thick barrier when the barrier width and Al component are small and the impurity locates in the channel near the interface of the heterojunction.

关 键 词：AlxGa1-xN/GaN异质结 有限厚势垒 杂质态结合能 

分 类 号：O471.3[理学—半导体物理]