BDD电化学结合表面活性剂的新型清洗方法  

Novel Post-CMP Cleaning Process Using BDD Film Combined with Surfactant

作　　者：周强[1] 刘玉岭[1] 高宝红[1] 刘效岩[1] 

机构地区：[1]河北工业大学电子信息学院,天津300130

出　　处：《半导体技术》2010年第9期859-862,888,共5页Semiconductor Technology

基　　金：02国家重大专项(2009zx02308);国家自然科学基金(10676008);教育部博士基金(20050080007)

摘　　要：提出了一种新型抛光后的清洗方法,采用掺硼金刚石膜作阳极的电化学方法制备出氧化液,用其去除表面有机污染物,同时配合使用非离子表面活性剂去除表面固体颗粒。用金刚石膜电化学制备出氧化液,克服了单纯电化学氧化生成的强氧化性羟基自由基不稳定和寿命短等缺点,实现氧化能力持久保持。表面活性剂能有效地去除表面颗粒,清洗后Si片上会有残留物,氧化液可以将残留物去除。通过实验对比发现,这种新颖的清洗方法在颗粒和有机物去除上有很好的清洗效果,能够满足微电子工艺的发展需求。A novel post-CMP cleaning process was presented, which using the boron-doped diamond （BDD） film clectrodc as anode in the elcctrochemical cleaning combined with non-ionic surfactant. Diamond films were prepared using electrochemical oxidation of liquid to overcome the simple electrochemical oxidation of the strong oxidizing hydroxyl radical instability and short life of the shortcomings to achieve oxidation endure. Surfactant can effectively remove the surface particles, but there will be a silicon wafer after cleaning residue, oxidation of liquid can removal it. Through the experimental comparison, it is found that the new cleaning method to remove particles and organic matter has a very good cleaning effect, and meets the development needs of micro-electronics technology.

关 键 词：金刚石膜电极 电化学氧化 氧化液 颗粒 有机物 

分 类 号：TN304.18[电子电信—物理电子学] TN305.97