GEM热中子探测器中硼转换体研制  

Development of the convertor of boron-10 for GEM-based thermal neutron detector

作　　者：宋仔峰[1] 叶树蓁[1] 陈子瑜[1] 沈激[1] 

机构地区：[1]中国科学技术大学近代物理系,合肥230026

出　　处：《核技术》2010年第9期701-704,共4页Nuclear Techniques

基　　金：国家自然科学基金资助(10775129)项目

摘　　要：本文介绍基于气体电子倍增器(GEM)的热中子探测器中硼-10转换体的制备过程。硼粉为原料,经研磨、真空高压烧结,制备成硼靶,实验表明靶物质中硼化物含量与烧结炉的真空度密切相关。探讨了热中子转换体的衬底条件和制备方法。以镀铝聚酰亚胺膜为衬底,研究热中子转换体硼膜的制备方法。用脉冲激光沉积(PLD)法,在100℃衬底温度下得到硼覆盖层,生长速率为0.56nm/min。XPS成分测定表明,覆盖层由硼及硼化物组成,可用作中子转换体。In this paper,was reported preparation of 10B film as neutron convertor used in GEM-based thermal neutron detector.The boron target was prepared using pressurized vacuum sintering of boron powder.It is found that the 10B content in the target was closely related to the vacuum environment.The 10B film was evaporated on an Al-coated polyimide film via pulsed laser deposition（PLD）.At 100℃ of the substrate,growth rate of the boron film was about 0.56 nm/min.Composition of the film was analyzed by XPS.The XPS data shows that it consists of boron and borides,both of that can be used as neutron convertor layer.

关 键 词：热中子 硼转换体 GEM PLD XPS 

分 类 号：O484.1[理学—固体物理]