Zn缓冲层对氧化锌薄膜的结构和光学特性的影响  

Effect of Zn buffer layer on the structural and optical properties of ZnO thin films

作　　者：贾迎飞[1] 马书懿[1] 陈海霞[1] 陶亚明[1] 侯丽莉[1] 孟军霞[1] 尚小荣[1] 

机构地区：[1]西北师范大学物理与电子工程学院,甘肃兰州730070

出　　处：《功能材料》2010年第9期1615-1617,1622,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10874140);甘肃省自然科学基金资助项目(0710RJZA1050)

摘　　要：采用射频磁控溅射法在玻璃衬底上制备了具有高c轴择优取向的不同Zn缓冲层厚度的ZnO(ZnO/Zn)薄膜。利用X射线衍射(XRD)法、扫描电子显微镜(SEM)技术和光致荧光(PL)发光谱(PL)等表征了ZnO/Zn薄膜的微观结构和发光特性。XRD的分析结果显示,随着缓冲层厚度的增加,(002)衍射峰的半高宽(FWHM)逐渐变小,表明薄膜的结晶质量得到改善。通过对样品PL谱的研究,发现分别位于435(2.85eV)和480nm(2.55eV)的蓝光双峰以及530nm(2.34eV)的绿光峰,且缓冲层沉积时间为10min时,样品的单色性最好。推测位于435nm的蓝光发射主要来源于电子从锌填隙缺陷能级到价带顶的跃迁所致,而绿光峰的发光机制与氧空位有关。The ZnO films with different thick Zn buffer layers were prepared on glass substrate in RF magnetron sputtering system. The micro-structural and optical properties were determined by X-ray diffraction （XRD）, scanning electron micrography （SEM） and photoluminescence （PL） spectra. XRD measurements revealed that the full width at half maximum （FWHM） of the （002） peak films gradually decreased as the thickness of buffer layers increased, indicating that crystal quality of ZnO films was improved. The PL blue double-peaks centered at 435nm （2.85eV） and 480nm （2.58eV）, and green peak centered at 530nm （2.34eV） were observed, respectively. The fact that using 15min to fabricate the Zn buffer layer film is the most suitable for the blue-radiation ray with monochromatic nature of the deposition. We could speculate that the blue emission centered at 435nm was mainly due to the electronic transition from interstitial zinc （Zni） defect to the top of the valence band. The green emission was mainly derived from oxygen vacancies.

关 键 词：ZNO薄膜 缓冲层 磁控溅射 光致发光 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.4[理学—固体物理]