溶胶-凝胶法制备Li_xMg_(0.2)Zn_(0.8-x)O四元合金薄膜及其性能表征  

Characterization of Li_xMg_(0.2)Zn_(0.8-x)O quaternary alloy thin films prepared by sol-gel

作　　者：刘凤琼[1] 刘肃[1] 锁雅芹[1] 尹小丽[1] 常鹏[1] 温燕[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《功能材料》2010年第9期1623-1626,共4页Journal of Functional Materials

基　　金：国家大学生创新性试验计划资助项目(071073021);甘肃省科技支撑计划资助项目(090GKCA049)

摘　　要：采用sol-gel法在载玻片上制备了ZnO薄膜和LixMg0.2Zn0.8-xO四元合金薄膜。利用XRD、SEM、PL、范德堡法以及热探针等测试手段对LixMg0.2Zn0.8-xO四元合金薄膜的结构性能、表面形貌、光学特性和电学特性进行了表征。研究发现LixMg0.2Zn0.8-xO四元合金薄膜具有ZnO薄膜的结构特性,相对于ZnO薄膜LixMg0.2Zn0.8-xO四元合金薄膜的结晶性和晶粒尺寸显著提高,并且光致发光强度大大增强。在LixMg0.2Zn0.8-xO四元合金薄膜的光致发光谱中出现了紫外发光峰和可见发光峰,紫外发光峰随着Mg/Zn的值的增加向短波长方向移动,可见光的发光强度较紫光峰的强度更强。LixMg0.2Zn0.8-xO四元合金薄膜的电阻率约为103～104Ω.cm,并随着Li组分的增加而降低。ZnO and LixMg0.2Zn0.8-xO quaternary alloy thin films were prepared on the glass by sol-gel method. The properties were examined by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, photoluminescence （PL）, Van der Pauw method and thermal probe. The results showed that the LixMg0.2Zn0.8-xO quaternary alloy films have the structural characteristics of ZnO thin films. Compared to the ZnO thin films, the crystalline, grain size and photoluminescence intensity of the LixMg0.2Zn0.8-xO quaternary alloy films were significantly increased. There are two peaks in the photoluminescence spectra of the LixMg0.2Zn0.8-xO quaternary alloy films, including the 380-390nm UV peak and a stronger intensity of visible light-emitting. The wavelength of the UV peak decreased as the value of Mg/Zn is increased. The resistivity of the LixMg0.2Zn0.8-xO quaternary alloy decreases as the components of Li increases.

关 键 词：LixMg0.2Zn0.8-xO四元合金薄膜 结晶性 光致发光 电阻率 

分 类 号：O472[理学—半导体物理] O484[理学—物理]