VHF-PECVD沉积本征微晶硅薄膜氧污染研究  

Investigation on oxygen contamination of intrinsic microcrystalline silicon thin films deposited by VHF-PECVD

作　　者：陈庆东[1] 王俊平[1] 张宇翔[2] 卢景霄[2] 

机构地区：[1]滨州学院物理与电子科学系,山东滨州256600 [2]郑州大学材料物理教育部重点实验室,河南郑州450052

出　　处：《真空》2010年第5期24-27,共4页Vacuum

摘　　要：通过激活能测试装置测量VHF-PECVD高速沉积的本征微晶硅薄膜,并对不同沉积功率、不同沉积压强条件下沉积制备的样品的激活能进行了分析研究。结果表明:在不同功率、不同气压沉积条件下沉积的微晶硅薄膜,激活能偏低,薄膜在沉积过程中被氧杂质污染;随着沉积功率的增大和沉积气压的增大,沉积速率随着提高,样品的激活能升高,通过提高沉积功率和沉积气压可以有效的抑制氧污染。The intrinsic microcrystalline silicon thin films were deposited by VHF-PECVD,and the activation energy of film samples was measured under conditions of different depositing power and pressures on a testing setup we developed and discussed.The results showed that the activation energy of the samples is lower than normal and the samples have been contaminated by oxygen during depositing.With the increasing depositing power and pressure,the depositing rate and activation energy both increase and the oxygen contamination could be suppressed.

关 键 词：VHF-PECVD 微晶硅 激活能 

分 类 号：TN304.12[电子电信—物理电子学]