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机构地区:[1]河北科技师范学院凝聚态物理研究所,河北秦皇岛066004 [2]内蒙古民族大学物理与电子信息学院,内蒙古通辽028043
出 处:《光学学报》2010年第9期2737-2741,共5页Acta Optica Sinica
基 金:河北省自然科学基金(A2008000463);半导体超晶格国家重点实验室开放研究基金(CHJG200701);内蒙古高等学校科学研究项目(NJ10116)资助课题
摘 要:基于Lee-Low-Pines-Huybrechts变分方法研究了抛物量子点中强耦合双极化子的基态性质,并推导出了量子点中强耦合双极化子有效势Veff随电子-声子耦合强度α、两电子相对距离r和量子点半径R0的变化规律。结果表明,有效势Veff由库仑势Vcoul、量子点的限定势Vconf和诱生势Ve-LO三部分组成;其中诱生势Ve-LO总是小于零,其绝对值Ve-LO随电子-声子耦合强度α的增加而增大,随电子间相对距离r和量子点半径R0的减小而增大。双极化子有效势的绝对值Veff随电子-声子耦合强度α的增加而增大,随电子间相对距离r的减小而增大。耦合强度α和电子间相对距离r是影响有效势Veff的主要因素,而量子点半径R0和介电常数比η对有效势Veff的影响较小。The ground state properties of the strong coupling bipolarons in a parabolic quantum dot are studied based on the Lee-Low-Pines-Huybrechts variational method. The law of the effective potential Veff of the strong coupling bipolarons changing with the strength of the electron-phonon coupling α, the relative distance between two electrons r, and the radiu of quantum dot R0 are derived. The results show that Veff consists of three parts: Coulomb potential Vcoul, confining potential Vconf and induced potential Ve-LO. Ve-LO is always less than zero, and the absolute value |Ve-LO| increases when the strength α, and increases when the relative distance r between the electrons and guantum dot′s radius R0 decreace. The absolute value |Veff| increases with the strength α increasing and increases with the relative distance r decreasing. α and r are the main factors to influence the effective value. However, the quantum dot′s radius R0 and the dielectric constant ratio η have little influence on the effective potential Veff.
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