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机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
出 处:《分析测试技术与仪器》2010年第3期162-165,共4页Analysis and Testing Technology and Instruments
摘 要:常温下用直流溅射法在Si(100)上淀积Pt/Ti电极薄膜.采用X射线衍射、原子力显微镜检测不同退火温度的薄膜,结果表明,退火初期Pt层内首先产生了压应力,从而使Pt表面形成了小丘凸起;退火过程产生的热应力在Pt层残余应力的产生中占主导地位,这种热应力使得Pt层最后的应力状态为张应力状态并且随着Pt层中Pt3Ti金属间化合物数量的增多而增大.Pt/Ti electrode thin films on Si(100) substrate were prepared by the DC magnetron sputtering at room temperature.Films treated at different temperatures were investigated using X-ray diffraction and atomic force microscopic methods.The effects of annealing temperature on Pt/Ti bilayer bottom electrode stress were dicussed.It is found that a comperssive stress of Pt layer is formed at the initial stage of anealing,so that protruded mounds are formed on the surface of the Pt layer.The thermal stress produced in the annealing process dominates the formaton of the residual stress of Pt layer.Such thermal stress makes the final stress state of Pt layer the tensile stress,and the tensile stress increases with the increase of Pt3Ti intermetallic compounds in the Pt layer.
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