过渡金属掺杂ZnO稀磁半导体的发光特性  

Luminescent Properties of Transition-metal-doped ZnO Diluted Magnetic Semiconductors

作　　者：徐明[1] 胡志刚[1] 吴艳南[1] 周海平[1] 徐禄祥[1] 周勋[2] 

机构地区：[1]四川师范大学物理与电子工程学院固体物理研究所,成都610068 [2]贵州师范大学物理与电子科学学院,贵阳550001

出　　处：《材料导报》2010年第19期27-33,48,共8页Materials Reports

基　　金：四川省教育厅基金(2006B033;2006C020);贵州省科学技术基金(黔科通J合[2006]2004)

摘　　要：ZnO是一种宽带隙Ⅱ-Ⅵ族半导体,具有良好的光电耦合特性和稳定性,在光、电、磁功能集成等新型器件方面可获得重要应用。近来的研究表明,过渡金属掺杂的ZnO基半导体有望成为实现高居里温度稀磁半导体的候选材料,是目前研究的热点。总结了近几年人们在Fe、Co、Ni、Cu、Mn等过渡金属掺杂的ZnO基稀磁半导体的发光特性研究结果,讨论了过渡金属掺杂后ZnO中观察到的可见发光机制,分析认为过渡金属掺杂ZnO的可见光发射主要与这些发光过渡金属引入后所产生的缺陷有关,而紫外发光峰的变化则与过渡金属掺入后ZnO晶体质量与禁带宽度的改变相关。ZnO is a type of Ⅱ-VI semiconductor materials with wide band gap. ZnO-based diluted magnetic semiconductors （DMS） have recently become the subject of an intensive research due to the possibility to achieve the room-temperature ferromagnetism. Besides its ferromagnetism, ZnO-based DMSs are also applicable in electrical and optical fields. The luminescent properties of ZnO-based DMSs doped with transition metals （TM） such as Fe, Co, Ni, Cu and Mn are reviewed. It is believed that the visible luminescence of TM-doped ZnO mainly originates from the de- fects is induced by TM, while the variation of ultra-visible luminescence is caused by the change of crystal quality and band structure of ZnO after doping with TM. These highly-unusual optical properties are promising for the develop- ment of the next-generation room-temperature DMS in basic and/or applied optics.

关 键 词：ZNO 稀磁半导体 过渡金属 掺杂 发光 

分 类 号：TN304.7[电子电信—物理电子学]