Ge/Si量子点生长的研究进展  

Advance in the Growth of Ge/Si Quantum Dots

作　　者：鲁植全[1] 王茺[1] 杨宇[1] 

机构地区：[1]云南大学光电信息材料研究所,昆明650091

出　　处：《材料导报》2010年第19期117-122,共6页Materials Reports

基　　金：国家自然科学基金(10964016);云南省自然基金重点项目(2008CC012);教育部科学技术研究重点项目

摘　　要：回顾了近年来在Ge/Si量子点生长方面的研究进展。主要讨论了为了提高量子点空间分布有序性、增大量子点的密度、减小量子点的尺寸及改善其分布均匀性而采取的各种方法,如图形衬底辅助生长、表面原子掺杂及利用超薄SiO2层辅助生长等,以及Ge量子点的演变及组分变化。Recent progress in the growth of the Ge/Si quantum dots is reviewed. Various approaches currently investigated to grow Ge/Si quantum dots with high uniformity, high density and small size are reviewed in detail, such as patterned substrate assisted growth, doping atoms on the surface and ultra-thin SiO2 films assisted growth. In addi- tion, the evolution and composition of the Ge dots are also well discussed.

关 键 词：Ge/Si量子点生长 图形衬底 表面原子掺杂 超薄SiO2层 Ge组分 

分 类 号：O484.1[理学—固体物理]