非掺半绝缘InP材料的电子辐照缺陷研究  

Study of electron irradiation-induced defects in undoped semi-insulating InP

作　　者：陈燕[1] 邓爱红[1] 赵有文[2] 张英杰[1] 余鑫祥[1] 喻菁[1] 龙娟娟[1] 周宇璐[1] 张丽然[1] 

机构地区：[1]四川大学物理科学与技术学院物理系,成都610065 [2]中国科学院半导体研究所,北京100083

出　　处：《四川大学学报（自然科学版）》2010年第5期1069-1072,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(10775102)

摘　　要：本文针对磷化铁(FeP_2)气氛下高温退火非掺杂半绝缘磷化铟(IP SI-InP)材料,应用正电子寿命谱及热激电流谱学技术,研究了该材料在电子辐照前后的缺陷情况.研究发现,该材料经电子辐照后缺陷浓度在增大,且形成了复合体的缺陷结构.电子辐照后的正电子湮没平均寿命增加了18 ps,对应的热激电流谱(TSC)也出现了相应的缺陷峰.本文还对缺陷的特性、影响材料的性能等进行了简要的论述.The positron annihilation lifetime spectroscopy （PAL） and thermally stimulated current spectroscopy （TSC） have been employed to study defects before and after electron irradiation in InP which has undergone a high-temperature annealing in iron phosphide ambience. It is found that the concentration of defects in SI-InP after electron irradiation increases and the complex defects are formed as well.The positron mean lifetime rm increases about 18ps and more defect peaks are also found in the TSC after irradiation. The characterization of defects and the influence of defects on material property are discussedsimply in this paper.

关 键 词：磷化铟 正电子寿命谱 电子辐照 缺陷 

分 类 号：O46[理学—电子物理学]