带有转向器的MOS双门极EST晶闸管  

MOS Dual Gated Emitter Switched Thyristor(EST) with a Diverter

作　　者：张昌利[1] 闵源基 金相哲 朴钟文 

机构地区：[1]西安电力电子技术研究所 [2]韩国电气研究所

出　　处：《电力电子技术》1999年第2期68-70,共3页Power Electronics

摘　　要：对带有ｐ型转向器的ＭＯＳ双门极ＥＳＴ晶闸管（ＤＧＥＳＴＤ）进行了研究。该ｐ型转向器（ｄｉｖｅｒｔｅｒ）与双门极的结合使得空穴电流分流，从而明显改善了传统ＥＳＴ的正向偏置安全工作区（ＦＢＳＯＡ），提高了其开关能力。用ＴＭＡＭＥＤＩＣＩ商用器件模拟软件对ＤＧＥＳＴＤ特性进行了模拟验证。The novel MOS Dual Gated EST with a p type diverter(DGESTD) is studied.Combined p type diverter with double gate control,this device has the function of shunt flowing of hole current,so,further improvements of the FBSOA and switching capability of EST are obtained.The performance of the DGESTD has been simulated by TMA MEDICI commercial device simulator to verify its characteristics.

关 键 词：晶闸管 DGESTD 转向器 MOS 

分 类 号：TN34[电子电信—物理电子学]