原子层沉积前驱体材料的研究进展  

The Research Progress of Precursors for Atomic Layer Deposition

作　　者：袁军平[1,2] 李卫[1] 郭文显[1] 

机构地区：[1]暨南大学理工学院,广州510632 [2]广州番禺职业技术学院,广州511483

出　　处：《表面技术》2010年第4期77-82,共6页Surface Technology

基　　金：广州市教育局科研项目(08C013);广州市教育系统首批建设创新学术团队项目(穗教科2009-11)

摘　　要：介绍了原子层沉积技术的基本原理及其特点,从无机类材料和有机金属类材料两个方面综述了前驱体材料的研究进展状况,介绍了单一元素、卤化物等无机类前驱体材料的特点,以及烷基、环戊二烯基、醇盐、β二酮、烷基胺、硅胺基和酰胺等有机金属类前驱体材料的特点。结合原子层沉积过程的工艺特点和膜层要求,强调了在选择前驱体材料时,需要综合考虑材料的蒸汽压、反应性、化学稳定性、反应产物的活性、材料的安全性及来源等方面的因素。The basic theory and characteristics of ALD process were introduced in briefly,and the research progress of precursors was summarized from two groups,including inorganic and organicmetal.The characteristics of single elements and halides as precursors in inorganic group,and those of organicmetal precursors such as alkyls,cyclopentadienyls,alkoxides,β-Diketonates,alkylamides,silylamides and amidinates were discussed.Considering the ALD process characteristics and the requirement for the film,it emphasized that several important factors should be synthetically considered in selection of precursors,including vapor pressure,reactivity,chemical stability,activity of reaction products,safety and source,etc.

关 键 词：原子层沉积 前驱体 材料 

分 类 号：O641.4[理学—物理化学]