磁控溅射中溅射电流对Ti薄膜膜基结合性能的影响  

Effect of Sputtering Current on Adhesion Strength of Ti Film Deposited by Magnetron Sputtering

作　　者：李丽[1] 吴卫[2] 张尧成[3] 

机构地区：[1]齐齐哈尔职业学院机电系,齐齐哈尔151006 [2]西华大学材料科学与工程学院,成都610039 [3]上海交通大学材料科学与工程学院,上海200240

出　　处：《表面技术》2010年第5期92-94,共3页Surface Technology

摘　　要：研究在磁控溅射工艺中工作压强和溅射时间恒定的情况下,溅射电流的变化对钛膜与基底Gd结合能力的影响。通过拉伸法测量薄膜与基体间的附着强度,利用扫描电镜观察Ti膜表面形貌。结果表明:溅射电流达到3 A时,Ti膜表面平整,与基体的结合力最强。由此说明,溅射电流的变化对钛膜与基底Gd结合能力的影响较大。The effect of sputtering current on adhesion strength of Ti film and Gd basis when the working pressure and time is constant was discussed.The adhesion strength between the film and the basis was tested by tension test,and the surface was investigated by SEM.The results show that when the sputtering current reachs 3 A,the surface of the Ti film is smooth,and the adhesion strength with the matrix is the strongest.It can be concluded that the variation of the sputtering current has prominent effect on the adhesion strength between the Ti film and the Gd.

关 键 词：Ti膜 磁控溅射 溅射电流 附着强度 

分 类 号：TG174.444[金属学及工艺—金属表面处理]