基于反射光谱的单层抗反射膜的非在位膜厚精确控制  

A novel non-situ thickness control method for a single anti-reflection coating thin film based on reflection spectrum analysis

作　　者：徐建明[1] 熊兵[1] 袁贺[1] 孙长征[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系,清华信息科学与技术国家实验室(筹),集成光电子学国家重点实验室,北京100084

出　　处：《光电子．激光》2010年第10期1507-1510,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60536020,60723002,50706022,60977022);国家“973”重大基础研究计划资助项目(2006CB302800,2006CB921106)

摘　　要：提出一种基于反射光谱分析的非在位膜厚控制技术,首先利用椭圆偏振光谱仪确定波长300～1 700 nm范围内的薄膜折射率,由此确定对应于特定波长(如1 550 nm)的最佳抗反射(AR)镀膜沉积条件。然后计算最佳AR镀膜厚度所对应的反射谱,得到相应的CIE标准色谱坐标。通过对比实测镀膜颜色和计算得到的最佳颜色,可以实现小尺寸器件端面上AR镀膜厚度的优化控制。利用这一方法,由等离子体增强化学气相沉积(PECVD)制备的SiNx单层AR镀膜,获得了4.4×10-4的反射率。A novel non-situ film thickness control method based on reflection spectrum analysis is proposed for anti-reflection（AR） coating,which is especially suitable for optoelectronic devices with small facet area.The refractive index of the coating film in 300-1 700 nm wavelength range is evaluated by spectroscopic ellipsometery,and the optimum deposition conditions for AR coating film are determined at a specified wavelength（e.g.1 550 nm）.The reflection spectrum of AR coating with optimum film thickness and its CIE chromatography coordinates can be estimated accordingly.By comparing the measured color of the thin film on coated device against the optimum value,the thickness of AR coating can be controlled to minimize the facet reflection.Based on this method,a single layer AR coating of SiNx with residual reflection as low as 4.4×10-4 is demonstrated by plasma enhanced chemical vapor deposition（PECVD）.

关 键 词：膜厚控制 抗反射(AR)镀膜 反射光谱 等离子体增强化学气相淀积(PECVD) 

分 类 号：TN209[电子电信—物理电子学]