低阈值量子结构激光器的优化结构设计  

Optimized Structure Design for Low Threshold Quantum Structure Lasers

作　　者：彭宇恒[1,2] 高强[1,2] 李军 王本忠[1,2] 陈维友[1,2] 刘式墉[1,2] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学实验区 [2]吉林大学电子工程系

出　　处：《中国激光》1999年第6期485-488,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金

摘　　要：针对低阈值半导体量子结构激光器（简称量子结构激光器），包括量子阱、量子线和量子点结构，给出了一个完整简便的方法用以优化设计最低阈值条件所需要的有源区结构。以对数形式给出了量子结构激光器材料增益和注入载流子浓度的关系，并且以ＩｎＧａＡｓ（Ｐ）／ＩｎＰ量子阱激光器和ＩｎＡｓ／ＧａＡｓ自组装量子点结构激光器为例，分别计算了为得到最低阈值电流所需要的量子阱阱数和自组装量子点的面密度以及激光器的腔长。For quantum structure lasers, including quantum well, quantum wire and quantum box lasers, a simple method is presented to obtain the optimized structure of the active region for low threshold condition. A logarithmic description is used to describe the relationship between the material gain and the injected carrier density. Taking the InGaAs(P)/InP quantum well laser and the InAs/GaAs self assembled quantum box laser as examples, the optimal condition to obtain the lowest threshold current is provided, including the number of quantum wells, the area density of quantum boxes, and the cavity length.

关 键 词：量子结构激光器 自组装量子点 结构设计 激光器 

分 类 号：TN248.03[电子电信—物理电子学]