基于0.18μm SiGe BiCMOS工艺的60GHz VCO分析与设计  

Analysis and Design of 60GHz VCO Using 0.18μm SiGe BiCMOS Technology

作　　者：王东[1] 吴玉平[1] 陈岚[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学与计算机》2010年第10期189-192,共4页Microelectronics & Computer

基　　金：国家重大专项(2009ZX02303-04)

摘　　要：采用0.18μm SiGe BiCMOS工艺,设计了一个60GHz的交叉耦合差分压控振荡器(VCO).通过分析传输线的性能,用λ/4短路传输线构造谐振回路.在分析VCO相位噪声的基础上,采用噪声滤波技术提高VCO的相位噪声性能.该VCO的工作电压为2.2V,偏置电流为11mA,频率调谐范围为58.377GHz^60.365GHz.当振荡频率为60.365GHz时,1MHz和10MHz频偏处的相位噪声分别为-79.1dBc/Hz和-99.77dBc/Hz.This paper introduces a 60GHz cross-coupled differential voltage-controlled oscillator（VCO）realized in 0.18μm SiGe BiCMOS technology.After analyzing the performance of transmission line,the resonator is fabricated with λ/4 short-circuited transmission line.This paper presents noise filtering technique to improve the performance of the VCO based on the analysis of phase noise of the VCO.The VCO provides tuning ranges of 58.377GHz～60.365GHz when its bias current is 11mA and supply voltage is 2.2V.The simulation result shows a phase noise of-79.1dBc/Hz at 1MHz offset and-99.77dBc/Hz at 10MHz offset from 60.365GHz carrier.

关 键 词：锗硅 压控振荡器 传输线 相位噪声 

分 类 号：TN752[电子电信—电路与系统]