Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition  

作　　者：陈牧笛 朱晓东 柯博 丁芳 温晓辉 周海洋 

机构地区：[1]CAS Key Laboratory of Basic Plasma Physics,Department of Modern Physics,University of Science and Technology of China

出　　处：《Plasma Science and Technology》2010年第5期547-550,共4页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China (No.10635010);the Key National Basic Research Program of China (No.2008CB717800)

摘　　要：Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane （HMDSO） as the gas source is reported. The SiC nanowires （SIC NWs） grew on Au-coated silicon substrate with core-shell structure, where the core consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without plasma assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane （HMDSO） as the gas source is reported. The SiC nanowires （SIC NWs） grew on Au-coated silicon substrate with core-shell structure, where the core consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without plasma assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.

关 键 词：SIC NANOWIRES plasma 

分 类 号：TN304.055[电子电信—物理电子学]