激光诱导击穿光谱测量重掺硅中的氧含量(英文)  

Determination of Oxygen Concentration in Heavily Doped Silicon Wafer by Laser Induced Breakdown Spectroscopy

作　　者：季振国[1,2] 席俊华[1,2] 毛启楠[2] 

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018 [2]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《无机材料学报》2010年第8期893-896,共4页Journal of Inorganic Materials

基　　金：Zhejiang Provincial Scientific Projects(2008F70015,2009C31007)

摘　　要：利用一台高能脉冲激光器和一个光纤耦合的CCD光谱仪构建了激光诱导击穿光谱仪(LIBS),并用它测量了重掺硅片中的氧含量.硅中的氧含量通过LIBS谱中的O_I(777nm)谱线和Si_I(288nm)谱线的强度比值O_I/Si_I获得.为了确定氧含量的绝对值,选定了4个轻掺杂的硅样品,分别利用业界通用的傅利叶变换红外吸收光谱(FTIR)和LIBS对其中的氧含量进行了测量,由此得出了利用LIBS确定硅中氧含量的定标曲线,并根据该定标曲线成功地测出了几个重掺硅片中的氧含量.Laser-induced breakdown spectroscopy （LIBS） has been applied to determine the oxygen concentration in heavily doped silicon wafer by using a high power pulsed laser and an optical fibre coupled CCD spctrometer. The relative concentration of oxygen in the heavily doped silicon wafer was calculated by the ratio of the integral intensity of the O~ emission of oxygen to the SiI emission silicon from the LIBS spectra. A calibration curve was obtained by comparing the oxygen concentration determined by LIBS with the oxygen concentration determined by conventional FTIR technique used in Si industies, in which a set of four lightly doped CZ silicon wafers were used. Based on the calibration curve, quantitative oxygen concentration in several heavily doped silicon samples was measured.

关 键 词：激光诱导击穿光谱 氧含量 重掺硅 

分 类 号：TB9[一般工业技术—计量学]