电化学腐蚀中多孔硅边缘效应的研究  

Research of boundary effects in thick porous silicon membranes

作　　者：张圣[1,2] 焦继伟[2] 葛道晗[1,2] 顾佳晔[2] 严培力[2] 张颖[2] 

机构地区：[1]中国科学院研究生院,北京100040 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《传感器与微系统》2010年第10期49-51,共3页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(6086079;60772030)

摘　　要：多孔硅在微电子机械系统(MEMS)、生物等领域得到了广泛的研究,边缘效应是其进入应用的难题之一,边缘效应的存在会导致多孔硅薄膜机械强度的降低,进而影响整个多孔硅薄膜的一致性。在n型和p型2种硅晶片上,研究了电化学腐蚀中常见的多孔硅边缘效应,分析了边缘效应的产生机制,分别使用SU8光刻胶掩模法和边缘区域施加压力法对边缘效应进行了有效的抑制。并在不同类型的硅晶片上,使用压力法制备出了无边缘效应的宏孔多孔硅膜,p型多孔硅膜厚达到250μm。Application of porous silicon has attracted lots of attention in relative field, such as micro-electro- mechanical system（MEMS） and bio-teehnique, but obstacles such as boundary effect in electrochemical etching should be overcomed. Exist of boundary effect leads to degrade mechanical strength of porous silicon membrane, even, affects the coherence of the membrane. Typical boundary effects occurred in our everyday experiments is studied and the possible mechanism of boundary effect is analyzed. In both n-type and p-type silicon wafers, the boundary effect are effectively controlled with SU8 photo-resist mask and mechanical stress applied in the margin of etching area. Thick macro-porous silicon membranes without boundary effect are produced in both n-type and ptype silicon, especially, the thickness of p-type macro-porous Si exceeded 250μm.

关 键 词：边缘效应 电化学腐蚀 机械应力 SU8光刻胶 

分 类 号：O646[理学—物理化学]