利用共振隧穿器件制作太赫兹波源  

Terahertz Wave Sources Made by Resonant Tunneling Devices

作　　者：郭维廉[1,2,3] 牛萍娟[1] 李晓云[1] 谷晓[1] 何庆国[2] 冯志红[2] 田爱华 张世林[3] 毛陆虹[3] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160 [2]天津工业大学专用集成电路重点实验室,石家庄050051 [3]天津大学电子信息工程学院,天津300072

出　　处：《微纳电子技术》2010年第10期595-602,623,共9页Micronanoelectronic Technology

摘　　要：太赫兹波是振荡频率在100GHz～10THz范围的电磁波,利用共振隧穿器件高频高速的特点,适宜制作此波段的振荡源器件。指出与其他类型的太赫兹源器件相比,共振隧穿型太赫兹波源器件具有体积小、重量轻、便于与控制电路集成以及易于进行调制等特点;此外,还适宜用Si透镜进行功率合成,增大其总发射功率。给出几种重要太赫兹共振隧穿器件的结构、制造工艺和器件性能,作为太赫兹技术领域的研究人员选择太赫兹波源器件的参考。The terahertz wave is defined as an electromagnetic wave in 100 GHz-10 THz oscillator frequency.The oscillator source operated in this frequency range is suitable to be made by using resonant tunneling devices with high frequency and high speed.Compared with other types of terahertz wave sources,the terahertz wave source with the resonant tunneling device structure has the advantages of small size and light weight,and is easy to integrate with controlled circuit and be modulated by voltage（or current）.In addition,the total power of the terahertz wave source with the resonant tunneling device structure can be increased by power synthesis with silicon lenses.The device structure,fabrication process and electronic performance of some important terahertz wave sources with the resonant tunneling structure were introduced to provide a reference for the selection of device types on terahertz wave sources in the area of the terahertz wave technology.

关 键 词：太赫兹波 太赫兹波源 共振隧穿器件 振荡源 毫米波 

分 类 号：TN312.2[电子电信—物理电子学] TN431.2