不同基区掺杂浓度NPN双极晶体管电离辐照效应  

Radiation Effect of NPN BJTs Under Various Base Doping Conditions

作　　者：席善斌[1,2,3] 陆妩[1,2] 郑玉展[1,2,3] 许发月[1,2,3] 周东[1,2,3] 李明[1,2,3] 王飞[1,2,3] 王志宽[4] 杨永晖[4] 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [3]中国科学院研究生院,北京100049 [4]模拟集成电路国家重点实验室,重庆400060

出　　处：《原子能科学技术》2010年第B09期533-537,共5页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(10975182)

摘　　要：对相同工艺制作但基区掺杂浓度不同的国产NPN双极晶体管,在不同剂量率条件下进行60Coγ辐照效应和退火特性研究。结果显示,晶体管基区掺杂浓度不同,对高、低剂量率的辐照响应也不相同,低基区掺杂浓度的晶体管辐照损伤明显高于高基区掺杂浓度的晶体管。60Co γ radiation effects and annealing behaviors of domestic NPN bipolar junction transistors with the same process technology but different base doping concentrations were investigated. It is shown that transistors with different base doping concentrations make the different responses of high and low dose rate radiation. More degradation can be seen in the lightly-doped base PNP transistors than the heavily-doped base PNP transistors.

关 键 词：NPN双极晶体管 60Co Γ辐照 基区掺杂浓度 低剂量率辐照损伤增强效应 

分 类 号：TN322.8[电子电信—物理电子学]