半导体超辐射发光管自发发射因子的估算  

Estimation of Spontaneous Emission Factor for Semiconductor Superluminescent Diodes

作　　者：赵永生[1] 宋俊峰[1] 韩伟华[1] 李雪梅[1] 杜国同[1] 高鼎三[1] 

机构地区：[1]吉林大学电子工程系及集成光电子学国家重点联合实验室

出　　处：《光学学报》1999年第4期452-456,共5页Acta Optica Sinica

基　　金：国家自然科学基金

摘　　要：自发发射因子β是半导体光电器件的重要参数，在以往对超辐射发光管的特性分析，特别是应用速率方程对超辐射器件的光强进行估算时，多沿用与超辐射发光器件相应结构激光器的β因子，由于两者的光输出特性不同，这种沿用不仅会造成β因子物理意义上的混乱，而且也给超辐射器件光电特性的分析带来了较大的误差。对超辐射发光管的自发发射因子β进行了讨论，提出了平均自发发射因子的概念，并对增益导引及折射率导引的β因子进行了估算和比较。Spontaneous emission factor β is an important parameter to characterize semiconductor optic electronic devices. In characteristic analysis of the superluminescent diodes, especially, in calculation of optical intensity using the rate equations, the value of the factor β estimated in the laser diodes is commonly applied since the superluminescent and laser diodes are similar in the structures. However the two types of devices are quite different, the extended usage of the factor may lead to confusion in physical concepts and make great error. In this paper, the spontaneous emission factor β for the superluminescent diodes is discussed, and a new concept on average value of the laser β is proposed. From estimation and comparison, the factors β of gain guide and index guide structures are obtained.

关 键 词：自发发射因子 超辐射发光管 增益 折射率 半导体 

分 类 号：TN360.1[电子电信—物理电子学]