C_3N_4/TiN交替复合膜的微结构研究  

STUDY OF THE MICROSTRUCTURE OF ALTERNATING C 3N 4 IN CN x /TiN COMPOSITE FILMS PREPARED 

作　　者：吴大维[1] 付德君[1] 毛先唯 叶明生 彭友贵 范湘军 

机构地区：[1]武汉大学理学院技术物理系

出　　处：《物理学报》1999年第5期904-912,共9页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：采用双阴极封闭型非平衡磁场ｄｃ反应磁控溅射离子镀制备Ｃ３Ｎ４／ＴｉＮ复合交替膜，用Ｘ射线光电子能谱法分析了薄膜的组成，测量了薄膜的Ｘ射线衍射谱和氮化碳的透射电子衍射图像．氮化碳经氮化钛的强迫晶化作用，生成了βＣ３Ｎ４和ｃＣ３Ｎ４．Abstract We prepared alternating CN x /TiN composite films using a dc magnetron sputtering system in which a closed unbalanced magnetic field was adopted and a negatively biased grating was placed in front of each substrate. The composition of the thin film was analyzed by X ray photoelectron spectroscopy (XPS). X ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the CN x films deposited at grating voltages lower than 400V are amorphous. β C 3N 4 and cubic C 3N 4(c C 3N 4) were formed at higher voltages. A high grating voltage is indispensable for synthesis of c C 3N 4. The lattice constants of C 3N 4 evaluated from the experimental data agree well with reported theoretical values.

关 键 词：复合膜 微结构 超硬材料 氮化碳 氮化钛 

分 类 号：TQ163[化学工程—高温制品工业] O484.8[理学—固体物理]