Mg掺杂量和退火温度对Mg_xZn_(1-x)O∶Al紫外透明导电薄膜结构与性能的影响  

Effects of Mg Doping Content and Annealing Temperature on Structure and Properties of Mg_xZn_(1-x)O∶Al UV-transparent Conducting Thin Films

作　　者：王华[1] 黄竹[1] 许积文[1] 杨玲[1] 

机构地区：[1]桂林电子科技大学材料科学与工程学院,桂林541004

出　　处：《人工晶体学报》2010年第5期1206-1210,共5页Journal of Synthetic Crystals

基　　金：广西教育厅科研项目(No.200734)

摘　　要：以自制MgxZn1-xO∶Al陶瓷为靶材,采用磁控溅射工艺在石英玻璃衬底上制备了MgxZn1-xO∶Al紫外透明导电薄膜,研究了Mg掺杂量和退火温度对MgxZn1-xO∶Al薄膜结构和光电性能的影响。X射线衍射表明,在x≤0.4的范围内,MgxZn1-xO∶Al薄膜为六角纤锌矿结构,当x≥0.6时,MgxZn1-xO∶Al薄膜为立方结构。当x≤0.4时,随着x值的增加,薄膜的电阻率有所增加,但其光学吸收边产生明显的蓝移,禁带宽度显著增大,透射光谱扩展到紫外区域。退火对薄膜电阻率影响显著,随着退火温度的增加,样品的电阻率先大幅度降低,后有略微的回升,600℃时电阻率最低,且吸收边较未退火时有一定的蓝移。MgxZn1-xO∶Al UV-transparent conducting thin films were prepared on quartz glass by radio frequency magnetron.The effects of Mg doping content and annealing temperature on the microstructure and photoelectric properties of MgxZn1-xO∶Al films were investigated.The XRD results indicate that the MgxZn1-xO∶Al thin film retains the wurtzite structure of ZnO when the value of x≤0.4,changes to the cubic structure when the value of xis larger than 0.6.With value of Mg doping incresing,the resistivity of MgxZn1-xO∶Al rapid rises and the absorption band edge is blue shifted obviously,band gap and the transmittance in UV region enlarges when x≤4.The resistivity of MgxZn1-xO∶Al decreased rapidly with the annealing temperature increased from 400 ℃ to 600 ℃,then increase slowly when the annealing temperature is above 600 ℃,meanwhile the absorption edge has a blue shift.

关 键 词：MgxZn1-xO∶Al 紫外透明导电薄膜 Mg掺杂 光电性能 

分 类 号：O484[理学—固体物理]