氧气流量对射频磁控溅射制备Cu_2O薄膜性能的影响  

Effect of Oxygen Flow Rate on the Properties of Cuprous Oxide Thin Films Sputtered by RF Magnetron

作　　者：林龙[1] 李斌斌[1] 鲁林峰[1] 江丰[1] 沈鸿烈[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《人工晶体学报》2010年第5期1221-1226,共6页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863计划)(2006AA03Z219);南京航空航天大学基本科研业务费专项科研项目(NS2010160)

摘　　要：通过磁控溅射方法在玻璃衬底上制备Cu2O薄膜,采用X射线衍射(XRD)、分光光度计、原子力显微镜(AFM)和X射线光电子能谱(XPS)等研究了氧气流量对Cu2O薄膜性能的影响。结果表明:氧气流量为4.2 sccm时,薄膜为单相的Cu2O,具有较高的结晶质量和可见光透过率,光学带隙为2.29 eV,薄膜的导电类型是p型且空穴浓度为2×1016cm-3。通过XPS能谱分析Cu 2p和O 1s结合能,确定了薄膜中Cu以+1价存在。Cuprous oxide（Cu2O） thin films were deposited on glass substrate by magnetron sputtering method.The influence of oxygen flow rate on the properties of Cu2O thin films was investigated by X-ray diffraction（XRD）,UV-vis spectrophotometer,atomic force microscope（AFM） and X-ray photoelectron spectroscopy（XPS）.The results show that when the oxygen flow rate is at 4.2 sccm,single phase Cu2O films are obtained.These films have high crystalline quality and visible light transmittance.The optical band gap（Eg） of the Cu2O films obtained under the optimized growth condition is 2.29 eV and the films have a hole concentration of 2×10^16 cm^-3,and the conductive type is p-type.The binding energy of Cu 2p3/2 and O 1sconfirmed that the chemical valence of Cu in the sample is ＋1.

关 键 词：氧化亚铜 磁控溅射 电阻率 光透射率 氧气流量 

分 类 号：O484[理学—固体物理]