化学气相输运法制备ZnO晶体  

Synthesis of ZnO Crystals by Chemical Vapor Transport Process

作　　者：韦志仁[1] 武明晓[1] 郭树青[1] 高平[1] 尹利君[2] 黄存新[3] 张金平[1] 张晓军[1] 董国义[1] 

机构地区：[1]河北大学物理科学与技术学院,河北省光电信息材料重点实验室,保定071002 [2]烁光特晶科技有限公司,北京100018 [3]北京中材人工晶体研究院有限公司,北京100018

出　　处：《人工晶体学报》2010年第5期1261-1264,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50472037,No.50672020,No.50772027);河北省自然科学基金(E2007000197,E2006001008)

摘　　要：采用化学气相输运法在常压开放系统中,以ZnO粉体为原料,HCl和NH3为输运气体,O2和H2O为反应气体,适度过量的HCl作为刻蚀性气体,在(0001)方向的蓝宝石籽晶片上制备了(0002)方向定向生长的ZnO晶体,且a、b轴生长速度明显高于c轴方向。以(0002)方向的ZnO籽晶片作基片,制备了ZnO单晶厚膜,晶体呈螺旋状外延生长,正极面的单晶摇摆曲线半高宽为543.6弧秒。Using ZnO powder as raw material,HCl and NH3 as transport agent,O2 and H2O vapor as reactant,and proper quantity of HCl as eroding vapor,ZnO crystals along（0002） growth direction were grown on Al2O3（0001） wafer by Chemical Vapor Transport（CVT） process in an open atmospheric system.The crystals growth speed along a-axis and b-axis are obviously faster than c-axis.The ZnO singe crystal thick film was synthesized when ZnO seed crystal along direction is used as substrate,the ZnO crystal shows the spiral-shaped epitaxial growth on the substrate,the half-width of rocking curve of positive face is 543.6 arc sec.

关 键 词：ZNO晶体 化学气相输运 摇摆曲线 

分 类 号：O614.24[理学—无机化学]