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作 者:陈文求[1] 陈川[1] 颜善银[1] 杨小进[1] 易昌凤[1,2] 徐祖顺[1,2]
机构地区:[1]湖北大学材料科学与工程学院 [2]功能材料绿色制备与应用省部共建教育部重点实验室,武汉430062
出 处:《高分子学报》2010年第11期1313-1319,共7页Acta Polymerica Sinica
基 金:湖北省自然科学基金(基金号2008CDB276)项目资助
摘 要:利用自己合成的含三苯基吡啶结构的BB′2型芳香三胺TAPP与A2型的二酐3,3′,4,4′-二苯酮四羧酸二酐(BTDA)在微波辐射下经"两步法"分别合成了氨基封端和酐基封端的新型超支化聚酰亚胺(AM-HBPI和AD-HBPI).通过FTIR、1H-NMR、XRD、TGA、溶解性试验以及UV-Vis和荧光光谱等对产物进行了一系列的结构表征和性能测试.结果表明,两种新型的含三苯基吡啶结构超支化聚酰亚胺(HBPI)在强极性非质子溶剂中均显示出良好的溶解性,对无机稀酸也具有一定的抗腐蚀性;它们还体现出优异的耐高温性,在N2中的10%热失重温度(T10%)分别高达573℃和568℃.除此之外,AM-HBPI和AD-HBPI还分别在200~400nm和200~350nm具有良好的紫外光吸收性能,以及紫、蓝色荧光发射性能.而且它们被HCl质子化后的紫外光吸收谱带均扩宽至425nm,荧光发射峰的强度也大大增强.Novel amino-terminated and anhydride-terminated hyperbranched polyimides (AM-HBPI and AD- HBPI) were successfully prepared by the two step method with a BB′2-type aromatic triamine containing triphenylpyridine structure ( TAPP ) and a A2-type dianhydride,3,3′,4,4′-benzophenonetetracarboxylic dianhydride (BTDA) under microwave irradiaton. The chemical structure and properties of the resulting HBPIs were characterized by FTIR spectroscopy,1H-NMR spectroscopy,XRD,TGA,solubility test,UV-Vis spectroscopy and fluorescence spectroscopy,respectively. The results showed that the resulting AM-HBPI and AD-HBPI were highly organosoluble in strong polar aprotic solvents and showed certain resistance to dilute inorganic acid corrosion. These polymers exhibited good thermal stability with the 10% weight loss temperature (Td10% ) up to 573℃ and 568℃ in N2 atmosphere,respectively. Furthermore,the obtained AM-HBPI and AD- HBPI containing triphenylpyridine structure exhibited UV-Vis absorption bands in the region of 200 ~ 400 nm and 200 ~ 350 nm,as well as possessed strong purple and blue fluorescence,respectively. The UV-Vis absorption bands both extended to 425 nm and fluorescence intensity increased after the polymers were protonated with hydrochloric acid. As a result,these organosoluble novel hyperbranched polyimides containing triphenylpyridine structure were promising as high temperature resistant materials for organic photoluminescent,etc. ,photoelectric applications.
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